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ICP high density plasma etching system
The etching range of ICP high-density plasma etching system: silicon base: Si, SiNx, SiO2, Ge, GeSi, deep silicon etching, and other high-density plasmas such as Ⅲ - Ⅴ, Ⅱ - Ⅵ, sapphire, SiC, metal (Al, Nb, W) support the whole piece of 8 inches or less in size and fragment etching Load-Lock dual-cavity. The number of transmission gas path of vacuum manipulator can be configured according to the user's needs to accurately control the temperature of back helium, It can realize the interlocking mechanism of low temperature/high temperature etching software and hardware based on Windows operating software, with system monitoring, process editing, parameter display and other functions, and the ability to store process logs and operation records, which can be customized based on user needs
隐藏域元素占位
It can quickly remove photoresist, organic matter, or realize the customization of surface modification function size, and the whole chip and fragment processing Ar, O2 two process gas touch screen operation
隐藏域元素占位
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